(Hong Kong)
Product Summary
The STP6NK90ZFP is an N-channel 900V - 1.56Ω - 5.8A - TO-220/TO-220FP/D2PAK/TO-247 Zener-protected SuperMESH Power MOSFET. The STP6NK90ZFP is obtained through an extreme optimization of ST’s well established stripbased PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products. The applications of the STP6NK90ZFP include high current, high speed switching, ideal for off-line power supplies, adaptors and pfc, lighting.
Parametrics
STP6NK90ZFP absolute maximum ratings: (1)VDS, Drain-source Voltage (VGS = 0): 900 V; (2)VDGR, Drain-gate Voltage (RGS = 20 kW): 900 V; (3)VGS, Gate- source Voltage: ± 30 V; (4)ID, Drain Current (continuous) at TC = 25℃: 5.8A; (5)ID, Drain Current (continuous) at TC = 100℃: 3.65A; (6)IDM, (·) Drain Current (pulsed): 23.2A; (7)PTOT Total Dissipation at TC = 25℃: 30 W; (8)Derating Factor: 0.24 W/℃; (9)VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KW): 4000 V; (10)dv/dt (1) Peak Diode Recovery voltage slope: 4.5 V/ns; (11)Viso Insulation Withstand Voltage (DC): 2500 V; (12)Tj, Operating Junction Temperature: -55 to 150℃; (13)Tstg, Storage Temperature: -55 to 150℃.
Features
STP6NK90ZFP features: (1)Typical RDS(on) = 1.56 W; (2)Extremely high dv/dt capability; (3)100% avalanche tested; (4)Gate charge minimized; (5)Very low intrinsic capacitances; (6)Very good manufacturing repeatibility.
Diagrams
| Image | Part No | Mfg | Description |  |
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 STP6NK90ZFP |
STMicroelectronics |
MOSFET N-Ch, 900V-1.56ohms Zener SuperMESH 5.8A |
Data Sheet |
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